| Manufacturer | |
| Mfr. Part # | AP50N10D |
| EBEE Part # | E83011373 |
| Package | TO-252-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 50A 85W 28mΩ@10V,20A 3V@250uA 1 N-channel TO-252-3L MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2527 | $ 0.2527 |
| 10+ | $0.1943 | $ 1.9430 |
| 30+ | $0.1693 | $ 5.0790 |
| 100+ | $0.1381 | $ 13.8100 |
| 500+ | $0.1242 | $ 62.1000 |
| 1000+ | $0.1159 | $ 115.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | A Power microelectronics AP50N10D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 28mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2nF | |
| Gate Charge(Qg) | 39nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2527 | $ 0.2527 |
| 10+ | $0.1943 | $ 1.9430 |
| 30+ | $0.1693 | $ 5.0790 |
| 100+ | $0.1381 | $ 13.8100 |
| 500+ | $0.1242 | $ 62.1000 |
| 1000+ | $0.1159 | $ 115.9000 |
