| Manufacturer | |
| Mfr. Part # | AP15N10D |
| EBEE Part # | E83011367 |
| Package | TO-252-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 19.3A 85mΩ@10V,5A 30W 2.5V@250uA 1 N-channel TO-252-3L MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1655 | $ 0.1655 |
| 10+ | $0.1274 | $ 1.2740 |
| 30+ | $0.1111 | $ 3.3330 |
| 100+ | $0.0907 | $ 9.0700 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | A Power microelectronics AP15N10D | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 19.3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 85mΩ@10V,5A | |
| Power Dissipation (Pd) | 30W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF@15V | |
| Input Capacitance (Ciss@Vds) | 1.1nF@15V | |
| Total Gate Charge (Qg@Vgs) | 11.9nC@50V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1655 | $ 0.1655 |
| 10+ | $0.1274 | $ 1.2740 |
| 30+ | $0.1111 | $ 3.3330 |
| 100+ | $0.0907 | $ 9.0700 |
