| Fabricant | |
| Référence Fabricant | DS110W |
| Référence EBEE | E8123900 |
| Boîtier | SOD-123F |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 100V 850mV@1A 1A SOD-123F Schottky Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0197 | $ 0.9850 |
| 500+ | $0.0155 | $ 7.7500 |
| 3000+ | $0.0132 | $ 39.6000 |
| 6000+ | $0.0118 | $ 70.8000 |
| 24000+ | $0.0106 | $ 254.4000 |
| 51000+ | $0.0099 | $ 504.9000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Diodes ,Diodes Schottky | |
| Fiche Technique | Shandong Jingdao Microelectronics DS110W | |
| RoHS | ||
| Courant de fuite inverse (Ir) | 200uA@100V | |
| Configuration à diode | 1 Independent | |
| Tension - marche arrière (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@1A | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0197 | $ 0.9850 |
| 500+ | $0.0155 | $ 7.7500 |
| 3000+ | $0.0132 | $ 39.6000 |
| 6000+ | $0.0118 | $ 70.8000 |
| 24000+ | $0.0106 | $ 254.4000 |
| 51000+ | $0.0099 | $ 504.9000 |
