| Fabricant | |
| Référence Fabricant | MJD44H11T4G |
| Référence EBEE | E838780 |
| Boîtier | TO-252(DPAK) |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 80V 20W 60@2A,1V 8A NPN TO-252-2(DPAK) Bipolar (BJT) ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.3423 | $ 1.7115 |
| 50+ | $0.2629 | $ 13.1450 |
| 150+ | $0.2241 | $ 33.6150 |
| 500+ | $0.1895 | $ 94.7500 |
| 2500+ | $0.1800 | $ 450.0000 |
| 5000+ | $0.1743 | $ 871.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,Bipolar (BJT) | |
| Fiche Technique | onsemi MJD44H11T4G | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | NPN | |
| Collector - Emitter Voltage VCEO | 80V | |
| Current - Collector(Ic) | 8A | |
| Number | 1 NPN | |
| Pd - Power Dissipation | 20W | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage(Vebo) | 5V | |
| Current - Collector Cutoff | 1uA | |
| Vce Saturation(VCE(sat)) | 1V | |
| Transition frequency(fT) | 85MHz |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.3423 | $ 1.7115 |
| 50+ | $0.2629 | $ 13.1450 |
| 150+ | $0.2241 | $ 33.6150 |
| 500+ | $0.1895 | $ 94.7500 |
| 2500+ | $0.1800 | $ 450.0000 |
| 5000+ | $0.1743 | $ 871.5000 |
