| Fabricant | |
| Référence Fabricant | MBRM2H100T3G |
| Référence EBEE | E8464198 |
| Boîtier | Power-mite-2 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | Power-mite-2 Schottky Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.4688 | $ 0.4688 |
| 10+ | $0.4104 | $ 4.1040 |
| 30+ | $0.3804 | $ 11.4120 |
| 100+ | $0.3520 | $ 35.2000 |
| 500+ | $0.3346 | $ 167.3000 |
| 1000+ | $0.3252 | $ 325.2000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Diodes ,Schottky Diodes | |
| Fiche Technique | onsemi MBRM2H100T3G | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 20uA@100V | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 840mV@2A | |
| Current - Rectified | 2A | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.4688 | $ 0.4688 |
| 10+ | $0.4104 | $ 4.1040 |
| 30+ | $0.3804 | $ 11.4120 |
| 100+ | $0.3520 | $ 35.2000 |
| 500+ | $0.3346 | $ 167.3000 |
| 1000+ | $0.3252 | $ 325.2000 |
