| Fabricant | |
| Référence Fabricant | FGH60N60SMD |
| Référence EBEE | E850649 |
| Boîtier | TO-247-3 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 600W 120A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $3.4314 | $ 3.4314 |
| 10+ | $2.9656 | $ 29.6560 |
| 30+ | $2.6890 | $ 80.6700 |
| 90+ | $2.4089 | $ 216.8010 |
| 450+ | $2.2805 | $ 1026.2250 |
| 900+ | $2.2216 | $ 1999.4400 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,Transistors/modules IGBT | |
| Fiche Technique | onsemi FGH60N60SMD | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 120A | |
| Power Dissipation (Pd) | 600W | |
| Turn?off Delay Time (Td(off)) | 104ns | |
| Turn?on Delay Time (Td(on)) | 18ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,60A | |
| Total Gate Charge (Qg@Ic,Vge) | 189nC | |
| Diode Reverse Recovery Time (Trr) | 39ns | |
| Turn?off Switching Loss (Eoff) | 0.45mJ | |
| Turn?on Switching Loss (Eon) | 1.26mJ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $3.4314 | $ 3.4314 |
| 10+ | $2.9656 | $ 29.6560 |
| 30+ | $2.6890 | $ 80.6700 |
| 90+ | $2.4089 | $ 216.8010 |
| 450+ | $2.2805 | $ 1026.2250 |
| 900+ | $2.2216 | $ 1999.4400 |
