| Fabricant | |
| Référence Fabricant | S8050-J3Y |
| Référence EBEE | E818221467 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 25V 300mW 350@50mA,1V 300mA NPN SOT-23 Bipolar (BJT) ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 100+ | $0.0049 | $ 0.4900 |
| 1000+ | $0.0039 | $ 3.9000 |
| 3000+ | $0.0035 | $ 10.5000 |
| 9000+ | $0.0031 | $ 27.9000 |
| 45000+ | $0.0028 | $ 126.0000 |
| 90000+ | $0.0026 | $ 234.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,Bipolaire (BJT) | |
| Fiche Technique | JSMSEMI S8050-J3Y | |
| RoHS | ||
| Operating Temperature | - | |
| Transistor Type | NPN | |
| Collector Current (Ic) | 300mA | |
| Power Dissipation (Pd) | 300mW | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V | |
| DC Current Gain (hFE@Ic,Vce) | 350@50mA,1V | |
| Transition Frequency (fT) | 150MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@500mA,50mA |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 100+ | $0.0049 | $ 0.4900 |
| 1000+ | $0.0039 | $ 3.9000 |
| 3000+ | $0.0035 | $ 10.5000 |
| 9000+ | $0.0031 | $ 27.9000 |
| 45000+ | $0.0028 | $ 126.0000 |
| 90000+ | $0.0026 | $ 234.0000 |
