| Fabricant | |
| Référence Fabricant | BRCS80N03DP |
| Référence EBEE | E8914064 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 30V 80A 7mΩ@4.5V 90W 1.7V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1052 | $ 0.5260 |
| 50+ | $0.0933 | $ 4.6650 |
| 150+ | $0.0874 | $ 13.1100 |
| 500+ | $0.0829 | $ 41.4500 |
| 2500+ | $0.0793 | $ 198.2500 |
| 5000+ | $0.0775 | $ 387.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Foshan Blue Rocket Elec BRCS80N03DP | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 7mΩ@4.5V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 90W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | - |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1052 | $ 0.5260 |
| 50+ | $0.0933 | $ 4.6650 |
| 150+ | $0.0874 | $ 13.1100 |
| 500+ | $0.0829 | $ 41.4500 |
| 2500+ | $0.0793 | $ 198.2500 |
| 5000+ | $0.0775 | $ 387.5000 |
