| Fabricante | |
| Código de Pieza del Fabricante | CS100N03B4 |
| Código de Pieza EBEE | E8162364 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 100A 100W 5.3mΩ@10V,50A 3V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3000 | $ 0.3000 |
| 10+ | $0.2377 | $ 2.3770 |
| 30+ | $0.2109 | $ 6.3270 |
| 100+ | $0.1776 | $ 17.7600 |
| 500+ | $0.1627 | $ 81.3500 |
| 1000+ | $0.1538 | $ 153.8000 |
| 2500+ | $0.1520 | $ 380.0000 |
| 5000+ | $0.1507 | $ 753.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Wuxi China Resources Huajing Microelectronics CS100N03B4 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 8mΩ@5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 300pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.5nF | |
| Output Capacitance(Coss) | 350pF | |
| Gate Charge(Qg) | 68nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3000 | $ 0.3000 |
| 10+ | $0.2377 | $ 2.3770 |
| 30+ | $0.2109 | $ 6.3270 |
| 100+ | $0.1776 | $ 17.7600 |
| 500+ | $0.1627 | $ 81.3500 |
| 1000+ | $0.1538 | $ 153.8000 |
| 2500+ | $0.1520 | $ 380.0000 |
| 5000+ | $0.1507 | $ 753.5000 |
