| Fabricante | |
| Código de Pieza del Fabricante | WNM6002-3/TR |
| Código de Pieza EBEE | E8501342 |
| Paquete | SOT-323 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 60V 300mA 2Ω@10V,370mA 370mW 2V@250uA 1 N-Channel SOT-323-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0341 | $ 0.6820 |
| 200+ | $0.0277 | $ 5.5400 |
| 600+ | $0.0242 | $ 14.5200 |
| 3000+ | $0.0221 | $ 66.3000 |
| 9000+ | $0.0202 | $ 181.8000 |
| 21000+ | $0.0193 | $ 405.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | WILLSEMI(Will Semicon) WNM6002-3/TR | |
| RoHS | ||
| Configuración | - | |
| RDS (on) | 1.7Ω@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 5.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 23.37pF | |
| Gate Charge(Qg) | 1.2nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0341 | $ 0.6820 |
| 200+ | $0.0277 | $ 5.5400 |
| 600+ | $0.0242 | $ 14.5200 |
| 3000+ | $0.0221 | $ 66.3000 |
| 9000+ | $0.0202 | $ 181.8000 |
| 21000+ | $0.0193 | $ 405.3000 |
