| Fabricante | |
| Código de Pieza del Fabricante | WCR1K2N65TG |
| Código de Pieza EBEE | E83445970 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 650V 2.5A 1.05Ω@10V,2.6A 30W 2V@150uA TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4527 | $ 0.4527 |
| 10+ | $0.3531 | $ 3.5310 |
| 30+ | $0.3108 | $ 9.3240 |
| 100+ | $0.2580 | $ 25.8000 |
| 500+ | $0.2429 | $ 121.4500 |
| 1000+ | $0.2279 | $ 227.9000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | WEIDA WCR1K2N65TG | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.22Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 0.3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 272pF | |
| Output Capacitance(Coss) | 8.3pF | |
| Gate Charge(Qg) | 10.4nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4527 | $ 0.4527 |
| 10+ | $0.3531 | $ 3.5310 |
| 30+ | $0.3108 | $ 9.3240 |
| 100+ | $0.2580 | $ 25.8000 |
| 500+ | $0.2429 | $ 121.4500 |
| 1000+ | $0.2279 | $ 227.9000 |
