| Fabricante | |
| Código de Pieza del Fabricante | SIR890DP-T1-GE3 |
| Código de Pieza EBEE | E8222431 |
| Paquete | PowerPAK-SO-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 20V 30A 5W 0.0029Ω@10V,10A 1V@250uA 1 N-channel PowerPAK-SO-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.8774 | $ 3.8774 |
| 10+ | $3.7989 | $ 37.9890 |
| 30+ | $3.3659 | $ 100.9770 |
| 100+ | $3.3131 | $ 331.3100 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | VISHAY SIR890DP-T1-GE3 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 4mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 310pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 2.747nF | |
| Output Capacitance(Coss) | 810pF | |
| Gate Charge(Qg) | 60nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.8774 | $ 3.8774 |
| 10+ | $3.7989 | $ 37.9890 |
| 30+ | $3.3659 | $ 100.9770 |
| 100+ | $3.3131 | $ 331.3100 |
