| Fabricante | |
| Código de Pieza del Fabricante | SI4850EY-T1-E3 |
| Código de Pieza EBEE | E83289752 |
| Paquete | SO-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 60V 8.5A 0.022Ω@10V,6.0A 3.3W 3V@250uA 1 N-Channel SOIC-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.0797 | $ 1.0797 |
| 10+ | $0.9955 | $ 9.9550 |
| 30+ | $0.9479 | $ 28.4370 |
| 100+ | $0.8955 | $ 89.5500 |
| 500+ | $0.8717 | $ 435.8500 |
| 1000+ | $0.8622 | $ 862.2000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Vishay Intertech SI4850EY-T1-E3 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 31mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 5.3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.3W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 8.5A | |
| Ciss-Input Capacitance | 18pF | |
| Gate Charge(Qg) | 27nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.0797 | $ 1.0797 |
| 10+ | $0.9955 | $ 9.9550 |
| 30+ | $0.9479 | $ 28.4370 |
| 100+ | $0.8955 | $ 89.5500 |
| 500+ | $0.8717 | $ 435.8500 |
| 1000+ | $0.8622 | $ 862.2000 |
