15% off
| Fabricante | |
| Código de Pieza del Fabricante | DTM4926-VB |
| Código de Pieza EBEE | E8879180 |
| Paquete | SO-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 30V 12A 1.2V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5007 | $ 0.5007 |
| 10+ | $0.4009 | $ 4.0090 |
| 30+ | $0.3590 | $ 10.7700 |
| 100+ | $0.3051 | $ 30.5100 |
| 500+ | $0.2808 | $ 140.4000 |
| 1000+ | $0.2672 | $ 267.2000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | VBsemi Elec DTM4926-VB | |
| RoHS | ||
| Tipo | N-Channel | |
| Configuración | - | |
| RDS (on) | 10mΩ@10V;12mΩ@4.5V | |
| Temperatura de funcionamiento - | - | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 73pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 4.1W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 641pF | |
| Output Capacitance(Coss) | 175pF | |
| Gate Charge(Qg) | 15nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5007 | $ 0.5007 |
| 10+ | $0.4009 | $ 4.0090 |
| 30+ | $0.3590 | $ 10.7700 |
| 100+ | $0.3051 | $ 30.5100 |
| 500+ | $0.2808 | $ 140.4000 |
| 1000+ | $0.2672 | $ 267.2000 |
