| Fabricante | |
| Código de Pieza del Fabricante | SI2323DS(UMW) |
| Código de Pieza EBEE | E85346821 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 4.2A 50mΩ@10V 1.4W 400mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0500 | $ 0.5000 |
| 100+ | $0.0401 | $ 4.0100 |
| 300+ | $0.0351 | $ 10.5300 |
| 3000+ | $0.0301 | $ 90.3000 |
| 6000+ | $0.0271 | $ 162.6000 |
| 9000+ | $0.0256 | $ 230.4000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | UMW(Youtai Semiconductor Co., Ltd.) SI2323DS(UMW) | |
| RoHS | ||
| RDS (on) | 50mΩ@10V;65mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 77pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.4W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 954pF | |
| Output Capacitance(Coss) | 115pF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0500 | $ 0.5000 |
| 100+ | $0.0401 | $ 4.0100 |
| 300+ | $0.0351 | $ 10.5300 |
| 3000+ | $0.0301 | $ 90.3000 |
| 6000+ | $0.0271 | $ 162.6000 |
| 9000+ | $0.0256 | $ 230.4000 |
