| Fabricante | |
| Código de Pieza del Fabricante | 1N65G |
| Código de Pieza EBEE | E8404319 |
| Paquete | SOT-223 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 650V 1A 140W 8.5Ω@10V,0.5A 4V@250uA 1 N-Channel SOT-223-4 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.0868 | $ 0.4340 |
| 50+ | $0.0683 | $ 3.4150 |
| 150+ | $0.0591 | $ 8.8650 |
| 500+ | $0.0521 | $ 26.0500 |
| 2500+ | $0.0419 | $ 104.7500 |
| 5000+ | $0.0391 | $ 195.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | UMW(Youtai Semiconductor Co., Ltd.) 1N65G | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 11Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 5.4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 1A | |
| Ciss-Input Capacitance | 150pF | |
| Output Capacitance(Coss) | 25pF | |
| Gate Charge(Qg) | 4.8nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.0868 | $ 0.4340 |
| 50+ | $0.0683 | $ 3.4150 |
| 150+ | $0.0591 | $ 8.8650 |
| 500+ | $0.0521 | $ 26.0500 |
| 2500+ | $0.0419 | $ 104.7500 |
| 5000+ | $0.0391 | $ 195.5000 |
