| Fabricante | |
| Código de Pieza del Fabricante | GT50JR22(S1WLD,E,S |
| Código de Pieza EBEE | E82880445 |
| Paquete | TO-3P-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | TO-3P-3 IGBT Transistors / Modules ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.6308 | $ 1.6308 |
| 10+ | $1.3625 | $ 13.6250 |
| 25+ | $1.0354 | $ 25.8850 |
| 100+ | $0.8702 | $ 87.0200 |
| 500+ | $0.7956 | $ 397.8000 |
| 1000+ | $0.7623 | $ 762.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,Transistores IGBT / Módulos | |
| Hoja de Datos | TOSHIBA GT50JR22(S1WLD,E,S | |
| RoHS | ||
| Colector-Emiter Breakdown Voltage (Vces) | 600V | |
| Pd - Power Dissipation | 250W | |
| Td(off) | 330ns | |
| Td(on) | 250ns | |
| Reverse Recovery Time(trr) | 350ns | |
| Input Capacitance(Cies) | 2.7nF | |
| Pulsed Current- Forward(Ifm) | 100A |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.6308 | $ 1.6308 |
| 10+ | $1.3625 | $ 13.6250 |
| 25+ | $1.0354 | $ 25.8850 |
| 100+ | $0.8702 | $ 87.0200 |
| 500+ | $0.7956 | $ 397.8000 |
| 1000+ | $0.7623 | $ 762.3000 |
