| Fabricante | |
| Código de Pieza del Fabricante | CI08S65E3 |
| Código de Pieza EBEE | E8967708 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 650V Independent Type 1.5V@8A 20A TO-252-2 SiC Diodes ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.0802 | $ 1.0802 |
| 10+ | $0.9860 | $ 9.8600 |
| 30+ | $0.9350 | $ 28.0500 |
| 100+ | $0.8775 | $ 87.7500 |
| 500+ | $0.7643 | $ 382.1500 |
| 1000+ | $0.7531 | $ 753.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Hoja de Datos | Tokmas CI08S65E3 | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 42.5uA@650V | |
| Diode Configuration | Independent | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.8V@8A | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 71A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.0802 | $ 1.0802 |
| 10+ | $0.9860 | $ 9.8600 |
| 30+ | $0.9350 | $ 28.0500 |
| 100+ | $0.8775 | $ 87.7500 |
| 500+ | $0.7643 | $ 382.1500 |
| 1000+ | $0.7531 | $ 753.1000 |
