| Fabricante | |
| Código de Pieza del Fabricante | TPM2009EP3 |
| Código de Pieza EBEE | E82844728 |
| Paquete | DFN1006-3L |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 660mA 700mΩ@2.5V,0.8A 100mW 1.1V@250uA 1 Piece P-Channel DFN1006-3L MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0393 | $ 0.7860 |
| 200+ | $0.0316 | $ 6.3200 |
| 600+ | $0.0277 | $ 16.6200 |
| 2000+ | $0.0249 | $ 49.8000 |
| 10000+ | $0.0200 | $ 200.0000 |
| 20000+ | $0.0188 | $ 376.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | TECH PUBLIC TPM2009EP3 | |
| RoHS | ||
| Tipo | P-Channel | |
| RDS (on) | 950mΩ@1.8V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 15pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 100mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 660mA | |
| Ciss-Input Capacitance | 170pF | |
| Output Capacitance(Coss) | 25pF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0393 | $ 0.7860 |
| 200+ | $0.0316 | $ 6.3200 |
| 600+ | $0.0277 | $ 16.6200 |
| 2000+ | $0.0249 | $ 49.8000 |
| 10000+ | $0.0200 | $ 200.0000 |
| 20000+ | $0.0188 | $ 376.0000 |
