| Fabricante | |
| Código de Pieza del Fabricante | TPM2008EP3-A |
| Código de Pieza EBEE | E82827633 |
| Paquete | DFN1006-3L |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 1 N-Channel DFN1006-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0346 | $ 0.6920 |
| 200+ | $0.0276 | $ 5.5200 |
| 600+ | $0.0238 | $ 14.2800 |
| 2000+ | $0.0215 | $ 43.0000 |
| 10000+ | $0.0174 | $ 174.0000 |
| 20000+ | $0.0163 | $ 326.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | TECH PUBLIC TPM2008EP3-A | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 370mΩ@25V | |
| Temperatura de funcionamiento - | - | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 700mA | |
| Ciss-Input Capacitance | 120pF | |
| Output Capacitance(Coss) | 20pF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0346 | $ 0.6920 |
| 200+ | $0.0276 | $ 5.5200 |
| 600+ | $0.0238 | $ 14.2800 |
| 2000+ | $0.0215 | $ 43.0000 |
| 10000+ | $0.0174 | $ 174.0000 |
| 20000+ | $0.0163 | $ 326.0000 |
