| Fabricante | |
| Código de Pieza del Fabricante | NTD5865NLT4G |
| Código de Pieza EBEE | E85350898 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 60V 50A 85W 20mΩ@10V,20A 2.5V@250uA TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4510 | $ 0.4510 |
| 10+ | $0.3557 | $ 3.5570 |
| 30+ | $0.3144 | $ 9.4320 |
| 100+ | $0.2636 | $ 26.3600 |
| 500+ | $0.2398 | $ 119.9000 |
| 1000+ | $0.2255 | $ 225.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | TECH PUBLIC NTD5865NLT4G | |
| RoHS | ||
| RDS (on) | 20mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2.05nF | |
| Gate Charge(Qg) | 50nC@30V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4510 | $ 0.4510 |
| 10+ | $0.3557 | $ 3.5570 |
| 30+ | $0.3144 | $ 9.4320 |
| 100+ | $0.2636 | $ 26.3600 |
| 500+ | $0.2398 | $ 119.9000 |
| 1000+ | $0.2255 | $ 225.5000 |
