45% off
| Fabricante | |
| Código de Pieza del Fabricante | DMG1012T |
| Código de Pieza EBEE | E82830301 |
| Paquete | SOT-523 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 800mA 250mΩ@4.5V 280mW 750mV@250uA 1 N-Channel SOT-523-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0206 | $ 0.4120 |
| 200+ | $0.0160 | $ 3.2000 |
| 600+ | $0.0134 | $ 8.0400 |
| 3000+ | $0.0119 | $ 35.7000 |
| 9000+ | $0.0105 | $ 94.5000 |
| 21000+ | $0.0098 | $ 205.8000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | TECH PUBLIC DMG1012T | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 300mΩ@2.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 280mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 800mA | |
| Ciss-Input Capacitance | 120pF | |
| Output Capacitance(Coss) | 20pF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0206 | $ 0.4120 |
| 200+ | $0.0160 | $ 3.2000 |
| 600+ | $0.0134 | $ 8.0400 |
| 3000+ | $0.0119 | $ 35.7000 |
| 9000+ | $0.0105 | $ 94.5000 |
| 21000+ | $0.0098 | $ 205.8000 |
