| Fabricante | |
| Código de Pieza del Fabricante | STP26NM60N |
| Código de Pieza EBEE | E8110593 |
| Paquete | TO-220 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 600V 20A 140W 0.135Ω@10V,10A 2V@250uA 1 N-Channel TO-220 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.6211 | $ 1.6211 |
| 10+ | $1.3798 | $ 13.7980 |
| 30+ | $1.2480 | $ 37.4400 |
| 100+ | $1.0051 | $ 100.5100 |
| 500+ | $0.9384 | $ 469.2000 |
| 1000+ | $0.9082 | $ 908.2000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | STMicroelectronics STP26NM60N | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 165mΩ@10V | |
| Temperatura de funcionamiento - | - | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 140W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.8nF | |
| Output Capacitance(Coss) | 115pF | |
| Gate Charge(Qg) | 60nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.6211 | $ 1.6211 |
| 10+ | $1.3798 | $ 13.7980 |
| 30+ | $1.2480 | $ 37.4400 |
| 100+ | $1.0051 | $ 100.5100 |
| 500+ | $0.9384 | $ 469.2000 |
| 1000+ | $0.9082 | $ 908.2000 |
