| Fabricante | |
| Código de Pieza del Fabricante | STL18N65M2 |
| Código de Pieza EBEE | E82970653 |
| Paquete | VDFN-8-Power |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 650V 8A 57W 0.365Ω@10V,4A 4V@250uA 1 N-Channel VDFN-8-Power MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.1967 | $ 1.1967 |
| 10+ | $1.0891 | $ 10.8910 |
| 30+ | $1.0297 | $ 30.8910 |
| 100+ | $0.9622 | $ 96.2200 |
| 500+ | $0.9317 | $ 465.8500 |
| 1000+ | $0.9188 | $ 918.8000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | STMicroelectronics STL18N65M2 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 365mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 1.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 57W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 764pF | |
| Gate Charge(Qg) | 21.5nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.1967 | $ 1.1967 |
| 10+ | $1.0891 | $ 10.8910 |
| 30+ | $1.0297 | $ 30.8910 |
| 100+ | $0.9622 | $ 96.2200 |
| 500+ | $0.9317 | $ 465.8500 |
| 1000+ | $0.9188 | $ 918.8000 |
