| Fabricante | |
| Código de Pieza del Fabricante | STGWA80H65DFB |
| Código de Pieza EBEE | E85268579 |
| Paquete | TO-247 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | TO-247 IGBT Transistors / Modules ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.1373 | $ 3.1373 |
| 10+ | $2.6690 | $ 26.6900 |
| 30+ | $2.3768 | $ 71.3040 |
| 90+ | $2.0768 | $ 186.9120 |
| 510+ | $1.9402 | $ 989.5020 |
| 990+ | $1.8815 | $ 1862.6850 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,Transistores IGBT / Módulos | |
| Hoja de Datos | STMicroelectronics STGWA80H65DFB | |
| RoHS | ||
| Temperatura de funcionamiento | -55℃~+175℃ | |
| Colector-Emiter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge (Vge (th) .Ic) | 5V@1mA | |
| Pd - Power Dissipation | 469W | |
| Gate Charge(Qg) | 414nC@15V | |
| Td(off) | 280ns | |
| Td(on) | 84ns | |
| Reverse Transfer Capacitance (Cres) | 215pF | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 2.1mJ | |
| Input Capacitance(Cies) | 10.524nF | |
| Pulsed Current- Forward(Ifm) | 240A | |
| Output Capacitance(Coes) | 385pF |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.1373 | $ 3.1373 |
| 10+ | $2.6690 | $ 26.6900 |
| 30+ | $2.3768 | $ 71.3040 |
| 90+ | $2.0768 | $ 186.9120 |
| 510+ | $1.9402 | $ 989.5020 |
| 990+ | $1.8815 | $ 1862.6850 |
