| Fabricante | |
| Código de Pieza del Fabricante | STD13N60M2 |
| Código de Pieza EBEE | E8457506 |
| Paquete | DPAK |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 600V 11A 110W 380mΩ@10V,5.5A 4V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6353 | $ 0.6353 |
| 10+ | $0.5143 | $ 5.1430 |
| 30+ | $0.4538 | $ 13.6140 |
| 100+ | $0.3949 | $ 39.4900 |
| 500+ | $0.3583 | $ 179.1500 |
| 1000+ | $0.3391 | $ 339.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | ST STD13N60M2 | |
| RoHS | ||
| RDS (on) | 380mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 580pF | |
| Gate Charge(Qg) | 17nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6353 | $ 0.6353 |
| 10+ | $0.5143 | $ 5.1430 |
| 30+ | $0.4538 | $ 13.6140 |
| 100+ | $0.3949 | $ 39.4900 |
| 500+ | $0.3583 | $ 179.1500 |
| 1000+ | $0.3391 | $ 339.1000 |
