| Fabricante | |
| Código de Pieza del Fabricante | STD100N3LF3 |
| Código de Pieza EBEE | E82970469 |
| Paquete | DPAK |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 30V 80A 110W 0.0055Ω@10V,40A 2.5V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.0713 | $ 3.0713 |
| 10+ | $2.6492 | $ 26.4920 |
| 30+ | $2.3972 | $ 71.9160 |
| 100+ | $2.1436 | $ 214.3600 |
| 500+ | $2.0271 | $ 1013.5500 |
| 1000+ | $1.9735 | $ 1973.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | ST STD100N3LF3 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 10mΩ@5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 67pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.06nF | |
| Gate Charge(Qg) | 27nC@5V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.0713 | $ 3.0713 |
| 10+ | $2.6492 | $ 26.4920 |
| 30+ | $2.3972 | $ 71.9160 |
| 100+ | $2.1436 | $ 214.3600 |
| 500+ | $2.0271 | $ 1013.5500 |
| 1000+ | $1.9735 | $ 1973.5000 |
