| Fabricante | |
| Código de Pieza del Fabricante | STD100N10F7 |
| Código de Pieza EBEE | E8457507 |
| Paquete | DPAK |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 100V 80A 120W 8mΩ@10V,40A 4.5V@250uA 1 N-Channel DPAK MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.7377 | $ 0.7377 |
| 10+ | $0.6629 | $ 6.6290 |
| 30+ | $0.6207 | $ 18.6210 |
| 100+ | $0.5755 | $ 57.5500 |
| 500+ | $0.5537 | $ 276.8500 |
| 1000+ | $0.5443 | $ 544.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | STMicroelectronics STD100N10F7 | |
| RoHS | ||
| RDS (on) | - | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 120W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 4.369nF | |
| Gate Charge(Qg) | 61nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.7377 | $ 0.7377 |
| 10+ | $0.6629 | $ 6.6290 |
| 30+ | $0.6207 | $ 18.6210 |
| 100+ | $0.5755 | $ 57.5500 |
| 500+ | $0.5537 | $ 276.8500 |
| 1000+ | $0.5443 | $ 544.3000 |
