23% off
| Fabricante | |
| Código de Pieza del Fabricante | STB55NF06T4 |
| Código de Pieza EBEE | E8472532 |
| Paquete | D2PAK |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 60V 50A 18mΩ@10V,27.5A 110W 4V@250uA 1 N-Channel D2PAK MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.8152 | $ 0.8152 |
| 10+ | $0.6816 | $ 6.8160 |
| 30+ | $0.6086 | $ 18.2580 |
| 100+ | $0.5258 | $ 52.5800 |
| 500+ | $0.4886 | $ 244.3000 |
| 1000+ | $0.4713 | $ 471.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | STMicroelectronics STB55NF06T4 | |
| RoHS | ||
| RDS (on) | 18mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.8152 | $ 0.8152 |
| 10+ | $0.6816 | $ 6.8160 |
| 30+ | $0.6086 | $ 18.2580 |
| 100+ | $0.5258 | $ 52.5800 |
| 500+ | $0.4886 | $ 244.3000 |
| 1000+ | $0.4713 | $ 471.3000 |
