| Fabricante | |
| Código de Pieza del Fabricante | SE6003C |
| Código de Pieza EBEE | E8417334 |
| Paquete | TO-251 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 60V 3A 1.7W 100mΩ@10V,3A 2.5V@250uA 1 N-Channel TO-251 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.0749 | $ 0.3745 |
| 50+ | $0.0651 | $ 3.2550 |
| 160+ | $0.0602 | $ 9.6320 |
| 480+ | $0.0565 | $ 27.1200 |
| 2480+ | $0.0536 | $ 132.9280 |
| 4960+ | $0.0521 | $ 258.4160 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | SINO-IC SE6003C | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 125mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 19.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.7W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 247pF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.0749 | $ 0.3745 |
| 50+ | $0.0651 | $ 3.2550 |
| 160+ | $0.0602 | $ 9.6320 |
| 480+ | $0.0565 | $ 27.1200 |
| 2480+ | $0.0536 | $ 132.9280 |
| 4960+ | $0.0521 | $ 258.4160 |
