| Fabricante | |
| Código de Pieza del Fabricante | SE4607 |
| Código de Pieza EBEE | E8238650 |
| Paquete | SO-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 1.2W 1 N-Channel + 1 P-Channel SOIC-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0508 | $ 0.5080 |
| 100+ | $0.0448 | $ 4.4800 |
| 300+ | $0.0418 | $ 12.5400 |
| 1000+ | $0.0395 | $ 39.5000 |
| 4000+ | $0.0364 | $ 145.6000 |
| 8000+ | $0.0355 | $ 284.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | SINO-IC SE4607 | |
| RoHS | ||
| Tipo | N-Channel + P-Channel | |
| RDS (on) | 45mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 52pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 450pF | |
| Output Capacitance(Coss) | 138pF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0508 | $ 0.5080 |
| 100+ | $0.0448 | $ 4.4800 |
| 300+ | $0.0418 | $ 12.5400 |
| 1000+ | $0.0395 | $ 39.5000 |
| 4000+ | $0.0364 | $ 145.6000 |
| 8000+ | $0.0355 | $ 284.0000 |
