| Fabricante | |
| Código de Pieza del Fabricante | 6888K |
| Código de Pieza EBEE | E8841306 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 68V 80A 7.9mΩ@10V,30A 108W 3V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1966 | $ 0.9830 |
| 50+ | $0.1743 | $ 8.7150 |
| 150+ | $0.1647 | $ 24.7050 |
| 500+ | $0.1528 | $ 76.4000 |
| 2500+ | $0.1298 | $ 324.5000 |
| 5000+ | $0.1266 | $ 633.0000 |
| 10000+ | $0.1250 | $ 1250.0000 |
| 20000+ | $0.1239 | $ 2478.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shenzhen Fuman Elec 6888K | |
| RoHS | ||
| RDS (on) | 7.9mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 312pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 108W | |
| Drain to Source Voltage | 68V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.988nF | |
| Gate Charge(Qg) | 78nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1966 | $ 0.9830 |
| 50+ | $0.1743 | $ 8.7150 |
| 150+ | $0.1647 | $ 24.7050 |
| 500+ | $0.1528 | $ 76.4000 |
| 2500+ | $0.1298 | $ 324.5000 |
| 5000+ | $0.1266 | $ 633.0000 |
| 10000+ | $0.1250 | $ 1250.0000 |
| 20000+ | $0.1239 | $ 2478.0000 |
