| Fabricante | |
| Código de Pieza del Fabricante | 4080K |
| Código de Pieza EBEE | E8841305 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | TO-252-2 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.2305 | $ 0.2305 |
| 10+ | $0.1795 | $ 1.7950 |
| 30+ | $0.1577 | $ 4.7310 |
| 100+ | $0.1305 | $ 13.0500 |
| 500+ | $0.1183 | $ 59.1500 |
| 1000+ | $0.1110 | $ 111.0000 |
| 2500+ | $0.1095 | $ 273.7500 |
| 5000+ | $0.1085 | $ 542.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shenzhen Fuman Elec 4080K | |
| RoHS | ||
| RDS (on) | 6.8mΩ@10V;9.5mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 176pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 42W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.246nF | |
| Output Capacitance(Coss) | 195pF | |
| Gate Charge(Qg) | 52nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.2305 | $ 0.2305 |
| 10+ | $0.1795 | $ 1.7950 |
| 30+ | $0.1577 | $ 4.7310 |
| 100+ | $0.1305 | $ 13.0500 |
| 500+ | $0.1183 | $ 59.1500 |
| 1000+ | $0.1110 | $ 111.0000 |
| 2500+ | $0.1095 | $ 273.7500 |
| 5000+ | $0.1085 | $ 542.5000 |
