| Fabricante | |
| Código de Pieza del Fabricante | 2080K |
| Código de Pieza EBEE | E82932010 |
| Paquete | TO-252-2 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 58A 88W 3.4mΩ@4.5V,30A 1.2V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3859 | $ 0.3859 |
| 10+ | $0.3065 | $ 3.0650 |
| 30+ | $0.2715 | $ 8.1450 |
| 100+ | $0.2287 | $ 22.8700 |
| 500+ | $0.2001 | $ 100.0500 |
| 1000+ | $0.1890 | $ 189.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shenzhen Fuman Elec 2080K | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 6mΩ@2.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 356pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 88W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.56nF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3859 | $ 0.3859 |
| 10+ | $0.3065 | $ 3.0650 |
| 30+ | $0.2715 | $ 8.1450 |
| 100+ | $0.2287 | $ 22.8700 |
| 500+ | $0.2001 | $ 100.0500 |
| 1000+ | $0.1890 | $ 189.0000 |
