| Fabricante | |
| Código de Pieza del Fabricante | NM3400 |
| Código de Pieza EBEE | E85155290 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 5.8A 1.2W 55mΩ@2.5V,3A 600mV@250uA SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0373 | $ 0.7460 |
| 200+ | $0.0294 | $ 5.8800 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0215 | $ 64.5000 |
| 9000+ | $0.0192 | $ 172.8000 |
| 21000+ | $0.0180 | $ 378.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shandong Jingdao Microelectronics NM3400 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 55mΩ@2.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 71pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 630pF | |
| Gate Charge(Qg) | 17.5nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0373 | $ 0.7460 |
| 200+ | $0.0294 | $ 5.8800 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0215 | $ 64.5000 |
| 9000+ | $0.0192 | $ 172.8000 |
| 21000+ | $0.0180 | $ 378.0000 |
