| Fabricante | |
| Código de Pieza del Fabricante | F5N65 |
| Código de Pieza EBEE | E85157088 |
| Paquete | ITO-220ABW |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 650V 5A 43W 2.1Ω@10V,2.5A 4V@250uA ITO-220ABW MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2126 | $ 1.0630 |
| 50+ | $0.1618 | $ 8.0900 |
| 150+ | $0.1424 | $ 21.3600 |
| 500+ | $0.1181 | $ 59.0500 |
| 2500+ | $0.1073 | $ 268.2500 |
| 5000+ | $0.1009 | $ 504.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shandong Jingdao Microelectronics F5N65 | |
| RoHS | ||
| RDS (on) | 2.1Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 43W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 870pF | |
| Gate Charge(Qg) | 14nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2126 | $ 1.0630 |
| 50+ | $0.1618 | $ 8.0900 |
| 150+ | $0.1424 | $ 21.3600 |
| 500+ | $0.1181 | $ 59.0500 |
| 2500+ | $0.1073 | $ 268.2500 |
| 5000+ | $0.1009 | $ 504.5000 |
