| Fabricante | |
| Código de Pieza del Fabricante | D7N70 |
| Código de Pieza EBEE | E85157076 |
| Paquete | TO-252W |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 700V 7A 54W 1.5Ω@10V,3.5A 4V@250uA TO-252W MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1847 | $ 0.9235 |
| 50+ | $0.1629 | $ 8.1450 |
| 150+ | $0.1535 | $ 23.0250 |
| 500+ | $0.1418 | $ 70.9000 |
| 2500+ | $0.1303 | $ 325.7500 |
| 5000+ | $0.1272 | $ 636.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shandong Jingdao Microelectronics D7N70 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.5Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 700V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 1.08nF | |
| Output Capacitance(Coss) | 103pF | |
| Gate Charge(Qg) | 22nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1847 | $ 0.9235 |
| 50+ | $0.1629 | $ 8.1450 |
| 150+ | $0.1535 | $ 23.0250 |
| 500+ | $0.1418 | $ 70.9000 |
| 2500+ | $0.1303 | $ 325.7500 |
| 5000+ | $0.1272 | $ 636.0000 |
