| Fabricante | |
| Código de Pieza del Fabricante | D4N70 |
| Código de Pieza EBEE | E85157063 |
| Paquete | TO-252W |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 700V 4A 2.8Ω@10V,2A 54W 4V@250uA TO-252W MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1780 | $ 0.8900 |
| 50+ | $0.1412 | $ 7.0600 |
| 150+ | $0.1254 | $ 18.8100 |
| 500+ | $0.1058 | $ 52.9000 |
| 2500+ | $0.0926 | $ 231.5000 |
| 5000+ | $0.0873 | $ 436.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Shandong Jingdao Microelectronics D4N70 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 2.8Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 700V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 560pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 13nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1780 | $ 0.8900 |
| 50+ | $0.1412 | $ 7.0600 |
| 150+ | $0.1254 | $ 18.8100 |
| 500+ | $0.1058 | $ 52.9000 |
| 2500+ | $0.0926 | $ 231.5000 |
| 5000+ | $0.0873 | $ 436.5000 |
