| Fabricante | |
| Código de Pieza del Fabricante | NGTB25N120FL3WG |
| Código de Pieza EBEE | E894822 |
| Paquete | TO-247 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 349W 100A 1.2kV FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.0085 | $ 3.0085 |
| 10+ | $2.5620 | $ 25.6200 |
| 30+ | $2.2828 | $ 68.4840 |
| 100+ | $1.9957 | $ 199.5700 |
| 500+ | $1.8663 | $ 933.1500 |
| 1000+ | $1.8111 | $ 1811.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Hoja de Datos | onsemi NGTB25N120FL3WG | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@400uA | |
| Pd - Power Dissipation | 349W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 136nC | |
| Td(off) | 109ns | |
| Td(on) | 15ns | |
| Reverse Transfer Capacitance (Cres) | 52pF | |
| Reverse Recovery Time(trr) | 114ns | |
| Switching Energy(Eoff) | 700uJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 3.085nF | |
| Pulsed Current- Forward(Ifm) | 100A | |
| Output Capacitance(Coes) | 94pF |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.0085 | $ 3.0085 |
| 10+ | $2.5620 | $ 25.6200 |
| 30+ | $2.2828 | $ 68.4840 |
| 100+ | $1.9957 | $ 199.5700 |
| 500+ | $1.8663 | $ 933.1500 |
| 1000+ | $1.8111 | $ 1811.1000 |
