| Fabricante | |
| Código de Pieza del Fabricante | MUN5211DW1T1G |
| Código de Pieza EBEE | E8152507 |
| Paquete | SOT-363 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | [email protected],10V 187mW 100mA 50V SOT-363 Digital Transistors ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0707 | $ 0.7070 |
| 100+ | $0.0600 | $ 6.0000 |
| 300+ | $0.0546 | $ 16.3800 |
| 3000+ | $0.0457 | $ 137.1000 |
| 6000+ | $0.0425 | $ 255.0000 |
| 9000+ | $0.0409 | $ 368.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,Bipolar (BJT) ,Bipolar Transistor Arrays, Pre-Biased | |
| Hoja de Datos | onsemi MUN5211DW1T1G | |
| RoHS | ||
| Temperatura de funcionamiento | -55℃~+150℃ | |
| Tipo | NPN | |
| Resistente de insumos | 13kΩ | |
| Ratio de resistor | 1 | |
| Voltaje de entrada (VI) Ic,Vce) | 2V | |
| Collector - Emitter Voltage VCEO | 50V | |
| Current - Collector(Ic) | 100mA | |
| Number | 2 NPN (Pre-Biased) | |
| Pd - Power Dissipation | 256mW | |
| DC Current Gain | 35 | |
| Current - Collector Cutoff | 100nA | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | 200mV | |
| Voltage - Input(Max)(VI(off)) | 1.2V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0707 | $ 0.7070 |
| 100+ | $0.0600 | $ 6.0000 |
| 300+ | $0.0546 | $ 16.3800 |
| 3000+ | $0.0457 | $ 137.1000 |
| 6000+ | $0.0425 | $ 255.0000 |
| 9000+ | $0.0409 | $ 368.1000 |
