10% off
| Fabricante | |
| Código de Pieza del Fabricante | FDV303N |
| Código de Pieza EBEE | E85343310 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 30V 2A 1W 200mΩ@4.5V,2A 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0309 | $ 0.6180 |
| 200+ | $0.0251 | $ 5.0200 |
| 600+ | $0.0220 | $ 13.2000 |
| 3000+ | $0.0201 | $ 60.3000 |
| 21000+ | $0.0176 | $ 369.6000 |
| 39000+ | $0.0173 | $ 674.7000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | MSKSEMI FDV303N | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 200mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 36pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 695pF | |
| Output Capacitance(Coss) | 45pF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0309 | $ 0.6180 |
| 200+ | $0.0251 | $ 5.0200 |
| 600+ | $0.0220 | $ 13.2000 |
| 3000+ | $0.0201 | $ 60.3000 |
| 21000+ | $0.0176 | $ 369.6000 |
| 39000+ | $0.0173 | $ 674.7000 |
