| Fabricante | |
| Código de Pieza del Fabricante | ME96N03-G |
| Código de Pieza EBEE | E82841363 |
| Paquete | TO-252-3L |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 30V 107.2A 6.3mΩ@4.5V,30A 62.5W 3V@250uA 1 N-channel TO-252-3L MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3010 | $ 0.3010 |
| 10+ | $0.2650 | $ 2.6500 |
| 30+ | $0.2494 | $ 7.4820 |
| 100+ | $0.2302 | $ 23.0200 |
| 500+ | $0.2216 | $ 110.8000 |
| 1000+ | $0.2164 | $ 216.4000 |
| 2500+ | $0.2139 | $ 534.7500 |
| 5000+ | $0.2122 | $ 1061.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | MATSUKI ME96N03-G | |
| RoHS | ||
| Temperatura de funcionamiento | -55℃~+150℃ | |
| Tipo | 1 N-channel | |
| Drenin Source Voltage (Vdss) | 30V | |
| Corriente de drenaje continuo (Id) | 107.2A | |
| Drain Source On Resistance (RDS(on)-Vgs,Id) | 6.3mΩ@4.5V,30A | |
| Disipación de energía (Pd) | 62.5W | |
| Gate Threshold Voltage (Vgs (th).Id) | 3V@250uA | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 277pF@25V | |
| Capacitación de entradas (Ciss-Vds) | 2892pF@25V | |
| Total Gate Charge (Qg-Vgs) | 62nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3010 | $ 0.3010 |
| 10+ | $0.2650 | $ 2.6500 |
| 30+ | $0.2494 | $ 7.4820 |
| 100+ | $0.2302 | $ 23.0200 |
| 500+ | $0.2216 | $ 110.8000 |
| 1000+ | $0.2164 | $ 216.4000 |
| 2500+ | $0.2139 | $ 534.7500 |
| 5000+ | $0.2122 | $ 1061.0000 |
