| Fabricante | |
| Código de Pieza del Fabricante | ME08N20-G |
| Código de Pieza EBEE | E8709728 |
| Paquete | TO-252-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 200V 9A 350mΩ@10V,5A 74.9W 4V@250uA 1 N-channel TO-252-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.3182 | $ 1.5910 |
| 50+ | $0.2528 | $ 12.6400 |
| 150+ | $0.2248 | $ 33.7200 |
| 500+ | $0.1899 | $ 94.9500 |
| 2500+ | $0.1743 | $ 435.7500 |
| 5000+ | $0.1650 | $ 825.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | MATSUKI ME08N20-G | |
| RoHS | ||
| Temperatura de funcionamiento | -55℃~+150℃@(Tj) | |
| Tipo | 1 N-channel | |
| Drenin Source Voltage (Vdss) | 200V | |
| Corriente de drenaje continuo (Id) | 9A | |
| Drain Source On Resistance (RDS(on)-Vgs,Id) | 350mΩ@10V,5A | |
| Disipación de energía (Pd) | 74.9W | |
| Gate Threshold Voltage (Vgs (th).Id) | 4V@250uA | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 21pF@25V | |
| Capacitación de entradas (Ciss-Vds) | 2.61nF@25V | |
| Total Gate Charge (Qg-Vgs) | 51.7nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.3182 | $ 1.5910 |
| 50+ | $0.2528 | $ 12.6400 |
| 150+ | $0.2248 | $ 33.7200 |
| 500+ | $0.1899 | $ 94.9500 |
| 2500+ | $0.1743 | $ 435.7500 |
| 5000+ | $0.1650 | $ 825.0000 |
