| Fabricante | |
| Código de Pieza del Fabricante | MS33N20HGC0 |
| Código de Pieza EBEE | E85353695 |
| Paquete | TO-247 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 200V 33A 85mΩ@10V,16A 180W 4V@250uA 1 N-channel TO-247 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.3145 | $ 1.3145 |
| 10+ | $1.0921 | $ 10.9210 |
| 30+ | $0.9701 | $ 29.1030 |
| 90+ | $0.8310 | $ 74.7900 |
| 450+ | $0.7693 | $ 346.1850 |
| 900+ | $0.7415 | $ 667.3500 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | MASPOWER MS33N20HGC0 | |
| RoHS | ||
| Configuración | - | |
| RDS (on) | 85mΩ@10V | |
| Temperatura de funcionamiento - | -65℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 180W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2.85nF | |
| Gate Charge(Qg) | 158nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.3145 | $ 1.3145 |
| 10+ | $1.0921 | $ 10.9210 |
| 30+ | $0.9701 | $ 29.1030 |
| 90+ | $0.8310 | $ 74.7900 |
| 450+ | $0.7693 | $ 346.1850 |
| 900+ | $0.7415 | $ 667.3500 |
