| Fabricante | |
| Código de Pieza del Fabricante | LSI1012LT1G |
| Código de Pieza EBEE | E8136183 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 20V 400mA 225mW 0.7Ω@1.8V,350mA 900mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0308 | $ 0.6160 |
| 200+ | $0.0240 | $ 4.8000 |
| 600+ | $0.0202 | $ 12.1200 |
| 3000+ | $0.0180 | $ 54.0000 |
| 9000+ | $0.0160 | $ 144.0000 |
| 21000+ | $0.0149 | $ 312.9000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | LRC LSI1012LT1G | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.25Ω@1.8V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 225mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Current - Continuous Drain(Id) | 500mA | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | [email protected],10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0308 | $ 0.6160 |
| 200+ | $0.0240 | $ 4.8000 |
| 600+ | $0.0202 | $ 12.1200 |
| 3000+ | $0.0180 | $ 54.0000 |
| 9000+ | $0.0160 | $ 144.0000 |
| 21000+ | $0.0149 | $ 312.9000 |
