| Fabricante | |
| Código de Pieza del Fabricante | LN2308LT1G |
| Código de Pieza EBEE | E883150 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 60V 2.6A 700mW 130mΩ@4.5V,2.1A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0710 | $ 0.7100 |
| 100+ | $0.0585 | $ 5.8500 |
| 300+ | $0.0523 | $ 15.6900 |
| 3000+ | $0.0476 | $ 142.8000 |
| 6000+ | $0.0439 | $ 263.4000 |
| 9000+ | $0.0420 | $ 378.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | LRC LN2308LT1G | |
| RoHS | ||
| RDS (on) | 130mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 700mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Ciss-Input Capacitance | 350pF | |
| Gate Charge(Qg) | 12nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0710 | $ 0.7100 |
| 100+ | $0.0585 | $ 5.8500 |
| 300+ | $0.0523 | $ 15.6900 |
| 3000+ | $0.0476 | $ 142.8000 |
| 6000+ | $0.0439 | $ 263.4000 |
| 9000+ | $0.0420 | $ 378.0000 |
