| Fabricante | |
| Código de Pieza del Fabricante | IRLR8726TRPBF |
| Código de Pieza EBEE | E881137 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 30V 86A 75W 5.8mΩ@10V,25A 1.8V@50uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1556 | $ 0.7780 |
| 50+ | $0.1221 | $ 6.1050 |
| 150+ | $0.1078 | $ 16.1700 |
| 500+ | $0.0899 | $ 44.9500 |
| 2000+ | $0.0820 | $ 164.0000 |
| 4000+ | $0.0772 | $ 308.8000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Infineon Technologies IRLR8726TRPBF | |
| RoHS | ||
| RDS (on) | 5.8mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 205pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 86A | |
| Ciss-Input Capacitance | 2.15nF | |
| Gate Charge(Qg) | 23nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1556 | $ 0.7780 |
| 50+ | $0.1221 | $ 6.1050 |
| 150+ | $0.1078 | $ 16.1700 |
| 500+ | $0.0899 | $ 44.9500 |
| 2000+ | $0.0820 | $ 164.0000 |
| 4000+ | $0.0772 | $ 308.8000 |
