Hot
| Fabricante | |
| Código de Pieza del Fabricante | IRF3205PBF |
| Código de Pieza EBEE | E82561 |
| Paquete | TO-220AB |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 55V 110A 8mΩ@10V,62A 200W 4V@250uA 1 N-Channel TO-220AB MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4114 | $ 0.4114 |
| 10+ | $0.3246 | $ 3.2460 |
| 50+ | $0.2797 | $ 13.9850 |
| 100+ | $0.2427 | $ 24.2700 |
| 500+ | $0.2314 | $ 115.7000 |
| 1000+ | $0.2250 | $ 225.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Infineon Technologies IRF3205PBF | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 8mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 211pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 200W | |
| Drain to Source Voltage | 55V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 110A | |
| Ciss-Input Capacitance | 3.247nF | |
| Gate Charge(Qg) | 146nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4114 | $ 0.4114 |
| 10+ | $0.3246 | $ 3.2460 |
| 50+ | $0.2797 | $ 13.9850 |
| 100+ | $0.2427 | $ 24.2700 |
| 500+ | $0.2314 | $ 115.7000 |
| 1000+ | $0.2250 | $ 225.0000 |
