| Fabricante | |
| Código de Pieza del Fabricante | IKW50N60T |
| Código de Pieza EBEE | E810458 |
| Paquete | TO-247 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | TO-247-3 IGBT Transistors / Modules ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.2700 | $ 3.2700 |
| 10+ | $2.8072 | $ 28.0720 |
| 30+ | $2.1194 | $ 63.5820 |
| 90+ | $1.8225 | $ 164.0250 |
| 480+ | $1.6885 | $ 810.4800 |
| 960+ | $1.6310 | $ 1565.7600 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,Transistores IGBT / Módulos | |
| Hoja de Datos | Infineon Technologies IKW50N60T | |
| RoHS | ||
| Temperatura de funcionamiento | -40℃~+175℃ | |
| Colector-Emiter Breakdown Voltage (Vces) | 600V | |
| Gate-Emitter Threshold Voltage (Vge (Vge (th) .Ic) | [email protected] | |
| Pd - Power Dissipation | 333W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 310nC@15V | |
| Td(off) | 299ns | |
| Td(on) | 26ns | |
| Reverse Recovery Time(trr) | 143ns | |
| Switching Energy(Eoff) | 1.4mJ | |
| Turn-On Energy (Eon) | 1.2mJ | |
| Input Capacitance(Cies) | 3.14nF | |
| Pulsed Current- Forward(Ifm) | 150A |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.2700 | $ 3.2700 |
| 10+ | $2.8072 | $ 28.0720 |
| 30+ | $2.1194 | $ 63.5820 |
| 90+ | $1.8225 | $ 164.0250 |
| 480+ | $1.6885 | $ 810.4800 |
| 960+ | $1.6310 | $ 1565.7600 |
