| Fabricante | |
| Código de Pieza del Fabricante | HT100NF80ASZ |
| Código de Pieza EBEE | E82874956 |
| Paquete | TO-263 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 80V 100A 8mΩ@10V,37.5A 173W 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.7646 | $ 0.7646 |
| 10+ | $0.6353 | $ 6.3530 |
| 30+ | $0.5691 | $ 17.0730 |
| 100+ | $0.5045 | $ 50.4500 |
| 500+ | $0.4099 | $ 204.9500 |
| 1000+ | $0.3894 | $ 389.4000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | HTCSEMI HT100NF80ASZ | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 8mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 275pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 173W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.38nF | |
| Output Capacitance(Coss) | 1.22nF | |
| Gate Charge(Qg) | 105nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.7646 | $ 0.7646 |
| 10+ | $0.6353 | $ 6.3530 |
| 30+ | $0.5691 | $ 17.0730 |
| 100+ | $0.5045 | $ 50.4500 |
| 500+ | $0.4099 | $ 204.9500 |
| 1000+ | $0.3894 | $ 389.4000 |
